Recently, Korean researchers have developed a microelectronic-compatible method to grow graphene to successfully synthesize wafer-level (4-in diameter) high-quality multilayer graphene on a silicon substrate. The method is based on an ion implantation technique that is simple and scalable. This result makes graphene one step closer to commercial applications. Relevant papers published in this week's "Applied Physics Letters". Wafer-level graphene may be an integral part of microelectronic circuits, but most of the graphene fabrication methods are not compatible with silicon microelectronic devices, hindering the leap from graphene to potential applications. To integrate graphene with advanced silicon microelectronic devices, large pieces of graphene must not crinkle and tear and must be able to deposit on silicon wafers at low temperatures, whereas traditional graphene synthesis techniques require high temperatures. "Our research shows that carbon ion implantation has great potential in the direct synthesis of wafer-level graphene for integrated circuits," said Kim Ji-hyun, a professor in charge of chemistry and bioengineering at Korea University in Korea. Kim Jae-Hyun pointed out that the traditional chemical vapor deposition method requires a temperature above 1000 ℃, which can be a large area of ​​copper, nickel film synthesis of graphene, and then transferred to the silicon substrate, which will cause fracture, wrinkling and pollution. His method is based on ion implantation. This is a microelectronic compatible technology commonly used for semiconductor doping. Carbon ions are accelerated in the electric field and strike a layer of material consisting of nickel, silicon dioxide and silicon at a temperature of only 500 ° C. The nickel layer is highly soluble in carbon as a catalyst for the synthesis of graphene. Then, the honeycomb lattice of graphene is formed by high-temperature activation annealing. They also systematically studied the effects of various annealing conditions in the synthesis process, including changing ambient pressure, ambient gas, and treatment time. Kim Ji-hyun said ion implantation technology for product structure control more sophisticated than other manufacturing methods, because you can control the dose of carbon ion implantation to precisely control the thickness of the graphene layer. "Our synthesis is controllable and upgradable, allowing us to create graphene in the size of silicon wafers (over 300mm in diameter)." Next, the researchers intend to continue to reduce the temperature of the synthesis process, control the thickness of graphene for industrial production. Broad Imp. & Exp. Co., Ltd. , http://www.hzweldingmachine.com